tlp626,tlp626-2,TLP626-4 2002-09-25 1 toshiba photocoupler gaas ired & photo ? transistor tlp626,tlp626-2,TLP626-4 programmable controllers ac / dc ? input module telecommunication the toshiba tlp626, ? 2 and ? 4 consist of gallium arsenide infrared emitting diodes connected in inverse parallel, optically coupled to a photo ? transistor. the tlp626 ? 2 offers two isolated channels in an eight lead plastic dip, while the tlp626 ? 4 provides four isolated channels in a sixteen plastic dip. collector ? emitter voltage: 55v(min.) current transfer ratio current transfer ratio(min.) ta = 25c ta = 25~75c classi fication i f = 1ma v ce = 0.5v i f = 0.5ma v ce = 1.5v i f = 1ma v ce = 0.5v marking of classi fication rank bv 200% 100% 100% bv standard 100% 50% 50% bv, blank isolation voltage: 5000v rms min. ul recognized: ul 1 577, file no.e67349 bsi approved: bs en60065: 1 994 certificate no.7426 bs en60950: 1 992 certificate no.7427 note: application type name for certification test, please use standard product type name, i.e. tlp626(bv): tlp626 pin configuration (top view) 1 : anode cathode 2 : cathode anode 3 : emitter 4 : collector tlp626 1 2 4 3 1, 3, 5, 7 : anode, cathode 2, 4, 6, 8 : cathode, anode 9, 11, 13, 15 : emitter 10, 12, 14, 16 : collector tlp626 ? 4 1 2 16 15 3 4 14 13 5 6 12 11 7 8 10 9 1, 3 : anode cathode 2, 4 : cathode anode 5, 7 : emitter 6, 8 : collector tlp626 ? 2 1 2 8 7 3 4 6 5 toshiba 11 ? 5b2 weight: 0.26g toshiba 11 ? 10c4 weight: 0.54g toshiba 11 ? 20a3 weight: 1.1g unit in mm
tlp626,tlp626-2,TLP626-4 2002-09-25 2 maximum ratings (ta = 25c) rating characteristic symbol tlp626 tlp626 2 tlp626 4 unit forward current i f 60 50 ma forward current derating ? i f / c 0.7(ta 39c) 0.5(ta 39c) ma / c pulse forward current i fp 1(100s pulse,100pps) a power dissipation (1 circuit) p d 100 70 mw power dissipation derating (ta 25c, 1 circuit) ? p d / c 1.0 0.7 mw / c led junction temperature t j 125 c collector emitter voltage v ceo 55 v emitter collector voltage v eco 7 v collector current i c 50 ma collector power dissipation (1 circuit) p c 150 100 mw collector power dissipation derating (ta 25c, 1 circuit) ? p c / c 1.5 1.0 mw / c detector junction temperature t j 125 c storage temperature range t stg 55~125 c operating temperature range p opr 55~100 c lead soldering temperature t sol 260(10s) c total package power dissipation (1 circuit) p t 250 150 mw total package power dissipation derating (ta 25c, 1 circuit) ? p t / c 2.5 1.5 mw / c isolation voltage (note 1) bv s 5000(ac, 1min., rh 60%) v r m s (note 1) device considered a two terminal: led side pins shorted together, and detector side pins shorted together. recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v cc D 5 24 v forward current i f(rms) D 1.6 20 ma collector current i c D 1 10 ma operating temperature t opr 25 D 75 c
tlp626,tlp626-2,TLP626-4 2002-09-25 3 individual electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10ma 1.0 1.15 1.3 v reverse current i f v f = 0.7v D 2.5 20 a led capacitance c t v = 0, f = 1mhz D 60 D pf collector emitter breakdown voltage v (br)ceo i c = 0.5ma 55 D D v emitter collector breakdown voltage v (br)eco i e = 0.1ma 7 D D v v ce = 24v D 10 10 na collector dark current i ceo v ce = 24v, ta = 85c D 2 50 a detector capacitance collector to emitter c ce v=0, f=1mhz D 12 D pf coupled electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit 100 D 1200 current transfer ratio i c / i f i f = 1ma, v ce = 0.5v rank bv 200 D 1200 % 50 D D low input ctr i c / i f (low) i f = 0.5ma, v ce = 1.5v rank bv 100 D D % i c = 0.5ma, i f = 1ma D D 0.4 D 0.2 D collector emitter saturation voltage v ce(sat) i c = 1ma, i f = 1ma rank bv D D 0.4 v off state collector current i c (off) v f = 0.7v, v ce = 24v D 1 10 a ctr symmetry *1 i c (ratio) i c (i f = 1ma) / i c (i f = 1ma) 0.5 D 2 D coupled electrical characteristics (ta = 25 75c) characteristic symbol test condition min. typ. max. unit 50 D D current transfer ratio i c / i f i f = 1ma, v ce = 0.5v rank bv 100 D D % D 50 D low input ctr i c / i f (low) i f = 0.5ma, v ce = 1.5v rank bv D 100 D % *1 i c(ratio) = v) 5 ce v f1, i f (i c1 i v) 5 ce v f2, i f (i c2 i i f1 i c2 i c1 v ce i f2
tlp626,tlp626-2,TLP626-4 2002-09-25 4 isolation characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit capacitance input to output c s v s = 0, f = 1mhz D 0.8 D pf isolation resistance r s v s = 500v 510 10 10 14 D ? ac, 1 minute 5000 D D ac, 1 second, in oil D 10000 D vrms isolation voltage bv s dc, 1 minute, in oil D 10000 D vdc switching characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit rise time t r D 8 D fall time t f D 8 D turn on time t on D 10 D turn off time t off v cc = 10v, i c = 2ma r l = 100 ? D 8 D s turn on time t on D 10 D storage time t s D 50 D turn off time t off r l = 4.7k ? (fig.1) v cc = 5 v, i f = 1.6ma D 300 D s fig. 1 switching operating conditions v ce t on i f t off v cc 4.5v 0.5v t s i f r l v cc v ce
tlp626,tlp626-2,TLP626-4 2002-09-25 5 ? v f / ? t a ? i f forward current i f (ma) forward voltage temperature coefficient ? v f / ? t a (mv/c) 2.8 0.4 0.3 50 0.1 0.8 1.2 1.6 2.0 2.4 0.5 1 3 5 10 30 pulse forward voltage v fp (v) i fp ? v fp pulse forward current i fp (ma) 1000 1 0 500 300 100 50 30 10 5 3 0.4 0.8 1.2 1.6 2.0 2.4 pulse width Q 10 s repetitive frequency = 100 hz t a = 25 c 120 allowable forward current i f (rms) (ma) i f ? t a ambient temperature t a (c) 100 0 20 80 60 40 20 0 20 40 60 80 100 tlp626 tlp626 2, 4 duty cycle ratio d r allowable pulse forward current i fp (ma) i fp ? d r 5000 10 3000 1000 500 300 100 50 30 10 3 3 10 2 3 10 1 3 10 0 pulse width 100 s t a = 25 c ambient temperature t a (c) allowable collector power dissipation p c (mw) p c ? t a 200 0 160 120 80 40 20 0 20 40 60 80 100 120 tlp626 tlp626 2, 4 i f ? v f forward voltage v f (v) forward current i f (ma) 100 0.1 0.4 50 30 10 5 3 1 0.5 0.3 06 0.8 1.0 1.2 1.4 1.6 ta = 2 5 c
tlp626,tlp626-2,TLP626-4 2002-09-25 6 current transfer ratio i c / i f (%) i c / i f ? i f forward current i f (ma) 1000 10 0.1 500 300 50 30 0.3 0.5 1 3 5 10 100 t a = 25 c v ce = 5 v v ce = 1.5 v v ce = 0.5 v ambient temperature t a (c) collector current i c (ma) i c ? t a 0.03 20 30 10 5 3 1 0.5 0.3 0 20 40 60 80 100 0.1 0.05 v ce = 1.5 v v ce = 0.5 v 0.2 m a 0.5 m a 1m a 2 ma i f = 2 ma 10 i c ? v ce collector-emitter voltage v ce (v) collector current i c (ma) 4.0 0 3.5 2.0 1.0 0.5 1.5 3.0 2.5 0.1 0.3 0.5 1 3 5 t a = 25 c i f = 1.0 ma 0.8 m a 0.6 m a 0.5 m a 0.4 m a 0.2 m a i c ? i f forward current i f (ma) collector current i c (ma) 50 0.01 0.1 0.5 0.3 0.05 0.03 0.3 0.5 1 3 5 10 0.1 30 10 5 3 1 t a = 25 c v ce = 5 v v ce = 1.5 v v ce = 0.5 v
tlp626,tlp626-2,TLP626-4 2002-09-25 7 ambient temperature t a (c) collector dark current i d (i ceo ) (a) i d ? t a 10 5 0 10 1 10 0 10 1 10 2 10 3 20 40 60 80 100 120 10 4 5 v v ce = 24 v 10 v load resistance r l (k ? ) switching time (s) switching time ? r l 3 3000 1000 500 300 100 50 30 10 5. 1 3 5 10 30 50 100 t a = 25 c i f = 1.6 ma v cc = 5 v t off t s t on
tlp626,tlp626-2,TLP626-4 2002-09-25 8 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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